Eight In. Wafer‐Scale Epitaxial Monolayer MoS₂

Abstract

Abstract Large‐scale, high‐quality, and uniform monolayer molybdenum disulfide (MoS 2 ) films are crucial for their applications in next‐generation electronics and optoelectronics. Epitaxy is a mainstream technique for achieving high‐quality MoS 2 films and is demonstrated at a wafer scale up to 4‐in. In this study, the epitaxial growth of 8‐in. wafer‐scale highly oriented monolayer MoS 2 on sapphire is reported as with excellent spatial homogeneity, using a specially designed vertical chemical vapor deposition (VCVD) system. Field effect transistors (FETs) based on the as‐grown 8‐in. wafer‐scale monolayer MoS 2 film are fabricated and exhibit high performances, with an average mobility and an on/off ratio of 53.5 cm 2 V −1 s −1 and 10 7 , respectively. In addition, batch fabrication of logic devices and 11‐stage ring oscillators are also demonstrated, showcasing excellent electrical functions. This work may pave the way of MoS 2 in practical industry‐scale applications.