Eight In. Wafer‐Scale Epitaxial Monolayer MoS₂

Abstract

Large-scale, high-quality, and uniform monolayer molybdenum disulfide (MoS₂) films are crucial for their applications in next-generation electronics and optoelectronics. Epitaxy is a mainstream technique for achieving high-quality MoS₂ films and is demonstrated at a wafer scale up to 4-in. In this study, the epitaxial growth of 8-in. wafer-scale highly oriented monolayer MoS₂ on sapphire is reported as with excellent spatial homogeneity, using a specially designed vertical chemical vapor deposition (VCVD) system. Field effect transistors (FETs) based on the as-grown 8-in. wafer-scale monolayer MoS₂ film are fabricated and exhibit high performances, with an average mobility and an on/off ratio of 53.5 cm² V^-1 s^-1 and 10⁷, respectively. In addition, batch fabrication of logic devices and 11-stage ring oscillators are also demonstrated, showcasing excellent electrical functions. This work may pave the way of MoS₂ in practical industry-scale applications.