A scalable ferroelectric non-volatile memory operating at 600 °C - Concepedia

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A scalable ferroelectric non-volatile memory operating at 600 °C

76

Citations

35

References

2024

Year

Dhiren K. Pradhan, David C. Moore, Gwangwoo Kim, Y. He, Pariasadat Musavigharavi, Kwan‐Ho Kim, Nishant Sharma, Zirun Han, Xingyu Du, Venkata Sreenivas Puli,

Nature Electronics

Materials ScienceNon-volatile MemoryEngineeringEmerging Memory TechnologyFerroelectric MaterialsFerroelectric Random-access MemoryMemory DevicesMicroelectronics

References

	Year	Citations

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