1984 · 36 citations · 0 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesIntegrated Circuit DesignMicrowave AmplifiersMicrowave Integrated CircuitsMicrowave Semiconductor DevicesPower AmplifiersRadio-frequency Integrated CircuitsDistributed AmplifiersGain CompressionLow-noise AmplifiersMillimeter-wave Integrated CircuitsNoise FigureNoise Figure AnalysisOptical LithographyPower Output
A low noise distributed amplifier is demonstrated over the 2 to 26.5 GHz band. The device exhibits a gain of 6 ± 0.3 dB over this band with a maximum noise figure of 5A dB and a maximum input/output VSWR of 1.7. The output power at the 1 dB gain compression point is typically 13 dBm. The 7-section distributed amplifier is fabricated on a chip with dimensions of 1.1×3.2 mm using optical lithography.