A 1-20 GHz Dual Gate Distributed Power Amplifier

Abstract

The design, modeling, fabrication and performance of a broadband distributed amplifier, employing power dual-gate FETs, will be described. This highly producible amplifier is capable of operating throughout the entire 1 to 20 GHz frequency range exhibiting an average gain of 8.6 dB and a power output of 0.5 Watt. A nonlinear analysis, which can predict the power limitations and power output performance of distributed structures will also be included in this discussion.