Effects of thermal annealing on analog resistive switching behavior in bilayer HfO<sub>2</sub>/ZnO synaptic devices: the role of ZnO grain boundaries

Yeong-Jin An, Han Yan, Chae-Min Yeom, Jun-Kyo Jeong, Sunil Babu Eadi, Hi‐Deok Lee, Hyuk-Min Kwon

Nanoscale · 2024 · 12 citations · 44 references

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Concepts

Abstract

, and the asymmetry ratio, which approached 1. The results offer valuable insights into the implementation of highly robust synaptic devices in neural networks.

References

44