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Improvement of the resistivity uniformity of 8-inch 4H–SiC wafers by optimizing the thermal field

Materials EngineeringSemiconductor TechnologyElectrical EngineeringEngineeringApplied PhysicsCarbideThermal FieldSemiconductor Device FabricationMicroelectronicsResistivity Uniformity8-Inch 4H–sicSemiconductor Device