Structural, microstructure, dielectric relaxation, and AC conduction studies of perovskite SrSnO₃ and Ruddlesden–Popper oxide Sr₂SnO₄

Abstract

correlated barrier hopping (CBH) in SSO and the non-overlapping of small-polaron tunnelling (NSPT) in S2SO. The conduction and relaxation processes had similar sources of charge carriers but differed in the concentration and mobility of charge carriers. The presented materials can be utilized for dielectric capacitors, sensors, and mixed ionic and electronic conductor-based electrodes in IT-SOFC applications.