Low‐Temperature Sputtered Ultralow‐Loss Silicon Nitride for Hybrid Photonic Integration

Abstract

Abstract Silicon‐nitride‐on‐insulator (Si 3 N 4 ) photonic circuits have seen tremendous advances in many applications, such as on‐chip frequency combs, Lidar, telecommunications, and spectroscopy. So far, the best film quality has been achieved with low pressure chemical vapor deposition (LPCVD) and high‐temperature annealing (1200°C). However, high processing temperatures pose challenges to the cointegration of Si 3 N 4 with pre‐processed silicon electronic and photonic devices, lithium niobate on insulator (LNOI), and Ge‐on‐Si photodiodes. This limits LPCVD as a front‐end‐of‐line process. Here, ultralow‐loss Si 3 N 4 photonics based on room‐temperature reactive sputtering is demonstrated. Propagation losses as low as 5.4 dB m −1 after 400°C annealing and 3.5 dB m −1 after 800°C annealing are achieved, enabling ring resonators with highest optical quality factors of > 10 million and an average quality factor of 7.5 million. To the best of the knowledge, these are the lowest propagation losses achieved with low temperature Si 3 N 4 . This ultralow loss enables the generation of microresonator soliton frequency combs with threshold powers of 1.1 mW. The introduced sputtering process offers full complementary metal oxide semiconductor (CMOS) compatibility with front‐end silicon electronics and photonics. This could enable hybrid 3D integration of low loss waveguides with integrated lasers and lithium niobate on insulator.