Publication | Closed Access
Trap engineering through chemical doping for ultralong X-ray persistent luminescence and anti-thermal quenching in Zn<sub>2</sub>GeO<sub>4</sub>
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Citations
53
References
2023
Year
Chemical DopingX-ray SpectroscopyEngineeringChemistryLuminescence PropertyX-ray FluorescenceIi-vi SemiconductorGeo 4PhotoluminescencePhysicsCrystallographyNatural SciencesX-ray DiffractionCondensed Matter PhysicsApplied PhysicsAnti-thermal QuenchingX-ray Persistent LuminescenceTrap EngineeringTrap TuningOptoelectronics
Temperature-dependent photoluminescence to understand negative thermal quenching in Zn 2 GeO 4 , and Pr 3+ doping for trap tuning and the enhanced formation of defect states leading to ultralong (>18 h) X-ray persistent luminescence.
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