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Exploring Monolayer GaN Doped with Transition Metals: Insights from First-Principles Studies

SemiconductorsMaterials ScienceWide-bandgap SemiconductorFirst-principles StudiesEngineeringPhysicsNanotechnologyTransition MetalsSurface ScienceApplied PhysicsQuantum MaterialsMonolayer Gan DopedGan Power DeviceMultilayer HeterostructuresCategoryiii-v Semiconductor