A 5-aminoisophthalic acid low molecular weight gelator based novel semiconducting supramolecular Zn(<scp>ii</scp>)-metallogel: unlocking an efficient Schottky barrier diode for microelectronics

Abstract

. The semiconductor characteristics of the synthesized zinc(ii)-metallogel devices, including their Schottky barrier diode properties, have been extensively investigated. This multifaceted study opens up a promising avenue for designing functional materials tailored for electronic applications. It harnesses the synergistic properties of supramolecular metallogels and highlights their significant potential in the development of semiconductor devices. This work represents a novel approach to the creation of advanced materials with unique electronic properties, offering exciting prospects for future innovations in electronic and semiconductor technologies.