1c:I[419806,["/_next/static/chunks/bb923814e1f4d2e9.js","/_next/static/chunks/dd3ee9f5b7716ca6.js","/_next/static/chunks/4204a0ae82542ca8.js","/_next/static/chunks/1270dead247da766.js","/_next/static/chunks/6e1aa89a642f40be.js","/_next/static/chunks/2d7aa753e81324a8.js","/_next/static/chunks/8ffd0b71567920d8.js","/_next/static/chunks/67ea6dfd21f16c5f.js","/_next/static/chunks/24eb4379f68013fd.js","/_next/static/chunks/b8cd775ffdf935bd.js","/_next/static/chunks/983103cd9eb7b428.js","/_next/static/chunks/263f2cdcb9aa2341.js","/_next/static/chunks/294b9525248c8e5f.js"],"default"] 1d:T4e9,Engineering semiconductor devices requires an understanding of charge carrier mobility. Typically, mobilities are estimated using Hall effect and electrical resistivity meausrements, which are are routinely performed at room temperature and below, in materials with mobilities greater than 1 cm² V^-1 s^-1 . With the availability of combined Seebeck coefficient and electrical resistivity measurement systems, it is now easy to measure the weighted mobility (electron mobility weighted by the density of electronic states). A simple method to calculate the weighted mobility from Seebeck coefficient and electrical resistivity measurements is introduced, which gives good results at room temperature and above, and for mobilities as low as 10^-3 cm² V^-1 s^-1 , [Formula: see text] Here, μ_w is the weighted mobility, ρ is the electrical resistivity measured in mΩ cm, T is the absolute temperature in K, S is the Seebeck coefficient, and k_B /e = 86.3 µV K^-1 . Weighted mobility analysis can elucidate the electronic structure and scattering mechanisms in materials and is particularly helpful in understanding and optimizing thermoelectric systems.1e:T4ad,Techniques and methods to facilitate the solution of structures by simulated annealing have been developed from the starting point of a space group and lattice parameters. The simulated-annealing control parameters have been systematically investigated and optimum values characterized and determined. Most significant is the inclusion of electrostatic-potential penalty functions in a non-linear least-squares Rietveld refinement procedure. The long-range electrostatic potentials are calculated using a general real-space summation which can be used for all space groups. In addition, a general weighting scheme for penalty functions negates the need to determine weighting schemes experimentally. Also investigated and improved is the non-linear least-squares minimization procedure used in the refinement of structural parameters. The behaviour and success of the techniques have been tested on X-ray diffraction powder data against the known structures of AlVO 4 in P 1 with 18 atoms in the asymmetric unit, K 2 HCr 2 AsO 10 in P 3 1 with 15 atoms in the asymmetric unit excluding hydrogen, and [Co(NH 3 ) 5 CO 3 ]NO 3 .H 2 O in P 12 1 with 15 atoms in the asymmetric unit excluding hydrogen.1f:T440,Titanium L3,2 and O K electron energy loss near-edge structures (ELNES) of seven Ti oxides have been measured in a transmission electron microscope to obtain information on the valence state and site geometry of Ti. The coordination of Ti in all phases studied is octahedral, whereas the valence states occurring are Ti2+, Ti3+, and Ti4+. Effects of polyhedra distortions are particularly observed for two oxides with mixed Ti3+-Ti4+ valence state, i.e., the Magnéli phases Ti4O7 and Ti5O9. A prominent pre-peak in the Ti L3 edge is attributed to the orthorhombic polyhedra distortions in these compounds, leading to complex crystal field splitting. The effect of valence state manifests itself in a systematic chemical shift of Ti white lines by 2 eV per valence state. On the basis of collected Ti L3,2 ELNES spectra we propose a new quantification technique for the determination of Ti4+/Ti3+ ratios. Complementary O K ELNES spectra were well reproduced by Density Functional Theory calculation, revealing that the O K-edge is sen

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