Coexisting Ferroelectric and Ferrovalley Polarizations in Bilayer Stacked Magnetic Semiconductors

Abstract

It has long been expected that the coexistence of ferroelectric and ferrovalley polarizations in one magnetic semiconductor could offer the possibility to revolutionize electronic devices. In this study, monolayer and bilayer YI₂ are studied. Monolayer YI₂ is a ferromagnetic semiconductor and exhibits a valley polarization up to 105 meV. All of the present bilayer YI₂ regardless of stacking orders show antiferromagnetic states. Interestingly, the bilayer YI₂ with 3R-type stackings shows not only valley polarization but also unexpected ferroelectric polarization, proving the concurrent ferrovalley and multiferroics behaviors. Moreover, the valley polarization of 3R-type bilayer YI₂ can be reversed by controlling the direction of ferroelectric polarization through an electric field or manipulating the magnetization direction using an external magnetic field. The amazing phenomenon is also demonstrated in 2D van der Waals LaI₂ and GdBr₂ bilayers. A design idea of multifunctional devices is proposed based on the concurrent ferrovalley and multiferroics characteristics.