Ultrahigh Responsivity β-Ga₂O₃/BP Junction Field Effect Phototransistors for UV/IR Dual-Band Detection

Abstract

In this work, a dual-band junction field effect phototransistor (JFEPT) was fabricated by integrating p-type black phosphorus (BP) with Si-doped <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> . The operation principle of the JFEPT was systematically investigated by commercial TACD software SILVACO. The results indicate that the photocurrent is mainly formed by electrons under short-wave radiation, while it is composed of electrons and holes under long-wave irradiation. In addition, the Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> doping concentration was determined to be <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$3\times 10^{{16}}$ </tex-math></inline-formula> cm <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^{-{3}}$ </tex-math></inline-formula> to obtain a large photo-to-dark current ratio (PDCR). The threshold voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {th}}{)}$ </tex-math></inline-formula> of the fabrication JFEPT was 0.65 V, indicating that the device working in normally- OFF state. The drain current was <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\sim 10^{-{6}}$ </tex-math></inline-formula> mA/mm and the ON/ OFF ratio is <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$10^{{5}}$ </tex-math></inline-formula> at <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{G}$ </tex-math></inline-formula> = −4 V and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {DS}}$ </tex-math></inline-formula> = 5 V. And the device exhibits a low leakage current of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$2.84\times 10^{-{6}}$ </tex-math></inline-formula> mA/mm. Under 254- and 808-nm illumination, the PDCR were 14713.79 and 5.53, and the responsivity was calculated to be <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$2.39\times 10^{{6}}$ </tex-math></inline-formula> and 535 mA/W, respectively. In addition, a low noise current of 0.17 nA/Hz <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^{\text {1/{2}}}$ </tex-math></inline-formula> at 1 Hz is beneficial for the device to detect the ultraweak optical signal. This work provides an important reference for the realization of high-performance UV-IR dual-band detector.