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280 Gbit/s PAM-4 Ge/Si Electro-absorption Modulator with 3-dB Bandwidth beyond 110 GHz

DOI

14

Citations

4

References

2023

Year

Xiao Hu, Dingyi Wu, Daigao Chen, Ye Liu, Hongguang Zhang, Yang Liu, Jia Liu, Min Liu, Lu Xu, Lei Wang,

Unknown Venue

Abstract

We developed a Ge/Si electro-absorption modulator with a record-high 3-dB bandwidth beyond 110 GHz. 224, 240 and 280 Gbit/s PAM-4 eye diagrams with the TDECQ of 1.79, 2.35 and 3.33 dB are experimentally obtained, respectively.

References

YearCitations

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