Memristor with digital and analog bipolar bimodal resistive switching offers a promising opportunity for the information-processing component. However, it still remains a huge challenge that the memristor enables bimodal digital and analog types and fabrication of artificial sensory neural network system. Here, a proposed CsPbBr<sub>3</sub> -based memristor demonstrates a high ON/OFF ratio (>10<sup>3</sup> ), long retention (>10<sup>4</sup> s), stable endurance (100 cycles), and multilevel resistance memory, which acts as an artificial synapse to realize fundamental biological synaptic functions and neuromorphic computing based on controllable resistance modulation. Moreover, a 5 × 5 spinosum-structured piezoresistive sensor array (sensitivity of 22.4 kPa<sup>-1</sup> , durability of 1.5 × 10<sup>4</sup> cycles, and fast response time of 2.43 ms) is constructed as a tactile sensory receptor to transform mechanical stimuli into electrical signals, which can be further processed by the CsPbBr<sub>3</sub> -based memristor with synaptic plasticity. More importantly, this artificial sensory neural network system combined the artificial synapse with 5 × 5 tactile sensing array based on piezoresistive sensors can recognize the handwritten patterns of different letters with high accuracy of 94.44% under assistance of supervised learning. Consequently, the digital-analog bimodal memristor would demonstrate potential application in human-machine interaction, prosthetics, and artificial intelligence.
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