Achieving Ultrahigh Electron Mobility in PdSe₂ Field‐Effect Transistors via Semimetal Antimony as Contacts

Abstract

Abstract Even though atomically thin 2D semiconductors have shown great potential for next‐generation electronics, the low carrier mobility caused by poor metal–semiconductor contacts and the inherently high density of impurity scatterings remains a critical issue. Herein, high‐mobility field‐effect transistors (FETs) by introducing few‐layer PdSe 2 flakes as channels is achieved, via directly depositing semimetal antimony (Sb) as drain–source electrodes. The formation of clean and defect‐free van der Waals (vdW) stackings at the Sb–PdSe 2 heterointerfaces boosts the room temperature transport characteristics, including low contact resistance down to 0.55 kΩ µm, high on‐current density reaching 96 µA µm −1 , and high electron mobility of 383 cm 2 V −1 s −1 . Furthermore, metal–insulator transition (MIT) is observed in the PdSe 2 FETs with and without hexagonal boron nitride (h–BN) as buffer layers. However, the layered h–BN/PdSe 2 vdW stacking eliminates the interference of interfacial disorders, and thus the corresponding device exhibits a lower MIT crossing point, larger mobility exponent of γ ∼ 1.73, significantly decreased hopping parameter of T 0 , and ultrahigh electron mobility of 2,184 cm 2 V −1 s −1 at 10 K. These findings are expected to be significant for developing high mobility 2D‐based quantum devices.