Sb₂Se₃/CdS/ZnO photodetectors based on physical vapor deposition for color imaging applications

Abstract

The reported antimony selenide (Sb₂Se₃) photodetectors (PDs) are still far away from color camera applications mainly due to the high operation temperature required in chemical vapor deposition (CVD) and the lack of high-density PD arrays. In this work, we propose a Sb₂Se₃/CdS/ZnO PD created by physical vapor deposition (PVD) operated at room temperature. Using PVD, a uniform film can be obtained, so the optimized PD has excellent photoelectric performance with high responsivity (250 mA/W), high detectivity (5.6 × 10¹² Jones), low dark current (∼10^-9 A), and short response time (rise: < 200 μs; decay: < 200 μs). With the help of advanced computational imaging technology, we successfully demonstrate color imaging applications by the single Sb₂Se₃ PD; thus, we expect this work can bring Sb₂Se₃ PDs in color camera sensors closer.