1c:I[419806,["/_next/static/chunks/bb923814e1f4d2e9.js","/_next/static/chunks/dd3ee9f5b7716ca6.js","/_next/static/chunks/4204a0ae82542ca8.js","/_next/static/chunks/30036bedc5269936.js","/_next/static/chunks/6e1aa89a642f40be.js","/_next/static/chunks/cd5e572bc3e4eb92.js","/_next/static/chunks/8ffd0b71567920d8.js","/_next/static/chunks/67ea6dfd21f16c5f.js","/_next/static/chunks/24eb4379f68013fd.js","/_next/static/chunks/b8cd775ffdf935bd.js","/_next/static/chunks/983103cd9eb7b428.js","/_next/static/chunks/d4ac9dcf27f6ff52.js","/_next/static/chunks/294b9525248c8e5f.js"],"default"] 1d:T44d,Solar hydrogen production via watersplitting with hematite (Fe2O3) has been limited by poor light absorption and a small hole diffusion length. These drawbacks can be overcome by using a high-surface-area host to support a thin layer of hematite—allowing photogenerated holes to be produced in high proximity to the semiconductor-liquid junction. Here we demonstrate the effectiveness of this concept using a nanostructured host scaffold (WO3) prepared by atmospheric pressure CVD to support a thin layer of Fe2O3 nanoparticles deposited by a similar method. A 20% increase in the photocurrent was observed in host−guest electrodes as compared to control films with the same amount of hematite (equivalent to a 60 nm film) deposited without the host scaffold. The improvement is attributed to an increase in the absorbed photon conversion efficiency (APCE), especially for longer wavelengths where the photon penetration depth is large in hematite. For light with a wavelength of 565 nm, the APCE improves to 8.0%, as compared to 5.7% with the control films because of the host/guest architecture.1e:T498,Broadband metamaterials absorbers with high absorption, ultrathin thickness and easy configurations are in great demand for many potential applications. In this paper, we first analyse the coupling resonances in a Ti/Ge/Ti three-layer absorber, which can realise broadband absorption from 8 to 12 μm. Then we experimentally demonstrate two types of absorbers based on the Ti/Ge/Si₃N₄/Ti configuration. By taking advantage of coupling surface plasmon resonances and intrinsic absorption of lossy material Si₃N₄, the average absorptions of two types of absorbers achieve almost 95% from 8 to 14 μm (experiment result: 78% from 6.5 to 13.5 μm). In order to expand the absorption bandwidth, we further propose two Ti/Si/SiO₂/Ti absorbers which can absorb 92% and 87% of ultra-broadband light in the 14-30 μm and 8-30 μm spectral range, respectively. Our findings establish general and systematic strategies for guiding the design of metamaterial absorbers with excellent broadband absorption and pave the way for enhancing the optical performance in applications of infrared thermal emitters, imaging and photodetectors.1f:T57e,

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