Preparation and optimization of heterojunction donor(DLC) – acceptor(SI) as a solar cell by DFT and PLD

Abstract

Hybrid bilayer heterojunction (DLC) thin-film P-type as an active donor layer and (Si) thin-film n-type as an acceptor with (Electron Transport Layer ), were fabricated using Qswitching Nd-YAG Pulsed Laser Deposition (PLD) method under vacuum condition 10-3 torr on two electrodes for (AL) Aluminum material is used to construct the hydride bilayer heterojunction photovoltaic solar cell (PVSC). The electrical properties of hybrid heterojunction Al / DLC / SI / AL thin film were studied. The result showed the voltage of open circuit (Vm=0.145V ), a short circuit (Jm=9.3mA/cm2 ), and the fill factor (FF) of (0.4709), with Xenon lamp with an intensity (235mw/cm2 ), the conversion efficiency (η=3.54%) at thickness(75nm). While the theoretical calculations and optimization of the HETEROJUNCTION confirmed the possibility of using it as a successful solar cell, the calculation of the small energy gap and thus the high electrical conductivity, and the determination of the type of charge carriers(p), as well as some electronic properties such as electrostatic potential surfaces and 3-D electron density, hardness, softness and electrophilicity, were clarified.