In this paper, an analytical model for a p-n-p-n tunnel field-effect transistor (TFET) working as a biosensor for label-free biomolecule detection purposes is developed and verified with device simulation results. The model provides a generalized solution for the device electrostatics and electrical characteristics of the p-n-p-n-TFET-based sensor and also incorporates the two important properties possessed by a biomolecule, i.e., its dielectric constant and charge. Furthermore, the sensitivity of the TFET-based biosensor has been compared with that of a conventional FET-based counterpart in terms of threshold voltage ( V _th ) shift, variation in the on-current ( I _on ) level, and I _on / I _off ratio. It has been shown that the TFET-based sensor shows a large deviation in the current level, and thus, change in I _on can also be considered as a suitable sensing parameter. Moreover, the impacts of device parameters (channel thickness and cavity length), process variability, and process-induced damage on the sensitivity of the biosensor have also been discussed.

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