High‐Performance Solution‐Processed 2D P‐Type WSe₂ Transistors and Circuits through Molecular Doping

Abstract

Semiconducting ink based on 2D single-crystal flakes with dangling-bond-free surfaces enables the implementation of high-performance devices on form-free substrates by cost-effective and scalable printing processes. However, the lack of solution-processed p-type 2D semiconducting inks with high mobility is an obstacle to the development of complementary integrated circuits. Here, a versatile strategy of doping with Br₂ is reported to enhance the hole mobility by orders of magnitude for p-type transistors with 2D layered materials. Br₂ -doped WSe₂ transistors show a field-effect hole mobility of more than 27 cm² V^-1 s^-1 , and a high on/off current ratio of ≈10⁷ , and exhibits excellent operational stability during the on-off switching, cycling, and bias stressing testing. Moreover, complementary inverters composed of patterned p-type WSe₂ and n-type MoS₂ layered films are demonstrated with an ultra-high gain of 1280 under a driving voltage (V_DD ) of 7 V. This work unveils the high potential of solution-processed 2D semiconductors with low-temperature processability for flexible devices and monolithic circuitry.