Electric‐field control of topological spin textures in BiFeO ₃ /La _0.67 Sr _0.33 MnO ₃ heterostructure at room temperature

Abstract

摘要 电场控制薄膜异质结中的拓扑磁结构在超高密度、低功耗的下一代存储器或逻辑器件中具有广阔的应用前景。自旋和电极化自由度共存的多铁材料为操控磁性(反向磁电效应)提供了一个丰富的系统。本文报道了在室温下由电场控制菱方BiFeO 3 /单斜La 0.67 Sr 0.33 MnO 3 薄膜异质结构的拓扑自旋结构。La 0.67 Sr 0.33 MnO 3 中的拓扑磁畴通过梯度应变设计的对称性来稳定。菱方BiFeO 3 中Dzyaloshinskii‐Moriya相互作用产生的倾斜铁磁性与拓扑磁畴相互作用。得益于BiFeO 3 中的铁电极化与反铁磁性之间的耦合，La 0.67 Sr 0.33 MnO 3 的磁畴可以在室温下被电场操纵，提供了一个低能耗的控制手性自旋结构的模型系统。 Electric‐field control of topological magnetic states in thin‐film heterostructures is promising for applications in next‐generation memory or logic devices with ultrahigh density and low‐power consumption. Multiferroic materials, where spin and polar degrees of freedom coexist, provide a versatile playground to manipulate magnetism (converse magnetoelectric effect). Here, we report that the topological spin textures can be controlled by electric field in rhombohedral BiFeO3/monoclinic La0.67Sr0.33MnO3 thin‐film heterostructure at room temperature. The canted ferromagnetism due to Dzyaloshinskii‐Moriya interaction in Rhombohedral BiFeO3 interplays with the topological magnetic domains in La0.67Sr0.33MnO3, which are stabilized with a symmetry design by a graded strain. Benefited from the couple of ferroelectric polarization and antiferromagnetism in BiFeO3, the magnetic domain in La0.67Sr0.33MnO3 can be manipulated by electric field at room temperature, providing a model system to control chiral spin structures with a low‐energy consumption.