Band Gap and Drain Dielectric Pocket Engineered Si0.2Ge0.8/GaAs Junctionless TFET with Dual Dielectric Gate for Ambipolar Suppression and Electrical Performance Enhancement - Concepedia

Concepedia

Publication | Closed Access

Band Gap and Drain Dielectric Pocket Engineered Si0.2Ge0.8/GaAs Junctionless TFET with Dual Dielectric Gate for Ambipolar Suppression and Electrical Performance Enhancement

21

Citations

39

References

2022

Year

Kaushal Kumar, S. C. Sharma

Electrical EngineeringEngineeringElectronic EngineeringApplied PhysicsDual Dielectric GateAmbipolar SuppressionMicroelectronicsBand GapSemiconductor Device

References

	Year	Citations

Page 1