Large Area Growth and Phase Selectivity of MoTe₂ Nanosheets through Simulation‐Guided CVD Tellurization

Abstract

Abstract Among transition metal dichalcogenides, molybdenum ditelluride (MoTe 2 ) holds significant attention due to its polymorphic nature including semiconducting, metallic, and topological semimetal phases. Considerable efforts are devoted to synthesizing MoTe 2 nanosheets to make them suitable for device integration in nanotechnologies and for fundamental investigations. In this respect, chemical vapor deposition (CVD) via tellurization of a pre‐deposited Mo thin film is an easy and flexible way for synthesizing large scale MoTe 2 nanosheets. Here, the study report on the CVD of large‐area (up to 4 cm × 1 cm) MoTe 2 nanosheets with pure 1T’ and 2H phase selection by design. Within the tellurization scheme, the vapor‐solid reaction between the pre‐deposited molybdenum film and tellurium vapor is studied thus optimizing the scalability and quality of the MoTe 2 nanosheets grown on SiO 2 /Si substrates. It is demonstrated that the MoTe 2 structure and morphology are kinetically dictated by the tellurium concentration gradient on the reaction site with varying geometric configurations inside the CVD reactor. This study provides a pivot scheme for enabling scalable 1T’ and 2H‐MoTe 2 integration in applications for novel micro‐ and nano‐electronics, spintronics, photonics, and thermoelectric devices.