Implementation of Band Gap and Gate Oxide Engineering to Improve the Electrical Performance of SiGe/InAs Charged Plasma-Based Junctionless-TFET - Concepedia

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Implementation of Band Gap and Gate Oxide Engineering to Improve the Electrical Performance of SiGe/InAs Charged Plasma-Based Junctionless-TFET

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References

2022

Year

Kaushal Kumar, Ajay Kumar, Varun Mishra, S. C. Sharma

Electrical EngineeringEngineeringGate Oxide EngineeringNanoelectronicsElectronic EngineeringApplied PhysicsSige/inas ChargedMicroelectronicsBand GapSemiconductor Device

References

	Year	Citations

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