Numerical Simulation of the Performance of Sb2Se3 Solar Cell via Optimizing the Optoelectronic Properties Based SCAPS-1D

Abstract

Antimony trisulfide (Sb₂Se₃), a non-toxic and accessible substance, has possibilities as a material for use in solar cells. The current study numerically analyses Sb₂Se₃ solar cells through the program Solar Cell Capacitance Simulator (SCAPS). A detailed simulation and analysis of the influence of the Sb₂Se₃ layer's thickness, defect density, band gap, energy level, and carrier concentration on the devices' performance are carried out. The results indicate that a good device performance is guaranteed with the following values in the Sb₂Se₃ layer: an 800 optimal thickness for the Sb₂Se₃ absorber; less than 10¹⁵ cm^-3 for the absorber defect density; a 1.2 eV optimum band gap; a 0.1 eV energy level (above the valence band); and a 10¹⁴ cm^-3 carrier concentration. The highest efficiency of 30% can be attained following optimization of diverse parameters. The simulation outcomes offer beneficial insights and directions for designing and engineering Sb₂Se₃ solar cells.