Vertical Organic Ferroelectric Synaptic Transistor for Temporal Information Processing

Abstract

Abstract Neuromorphic technology is the next stage in the evolution of high‐performance computing, with its ability to dramatically improve data processing and learning. Hence, the exploration of synaptic electronic devices with multiple excitation modes is the main area of concern. In this work, a vertical organic ferroelectric synaptic transistor (VOFST) capable of achieving the synaptic plasticity is demonstrated, profit by its nanoscale channel length and unique working principle, which exhibits excellent gate modulation capability and good synaptic properties. Based on the excellent tunability of VOFST in various excitation modes, a “Morse code” decoding scheme and the application of the signal identification of over‐threshold are proposed. Most importantly, the internal carrier dynamics modulated by VOFST's ferroelectric polarization induction enables the transistor to directly process the temporal information for image recognition tasks. This work guides the development of synaptic devices and provides a platform to realize the neuromorphic functions in electronic field.