Sn composition graded GeSn photodetectors on Si substrate with cutoff wavelength of 3.3 <i>μ</i>m for mid-infrared Si photonics

Abstract

The Sn composition graded GeSn layer with Sn content increased from 11% to 14.3% was grown on a Si substrate by molecular beam epitaxy. The structural properties of the GeSn layer are investigated, and the film is gradually relaxed along the thickness, reaching approximately 71.6%. The GeSn p–i–n detectors were fabricated by using a complementary metal oxide semiconductor compatible process. The GeSn detectors demonstrated a cutoff wavelength of approximately 3.3 μm at room temperature with a dark current of 0.3 A/cm2 @ -1 V. At a wavelength of 2000 nm, the GeSn detectors had a responsivity of 110 mA/W and -3 dB bandwidth (f3 dB) about 3 GHz. These results suggest that high Sn content relax GeSn can be grown by MBE and paves the way toward the feasibility of mid-infrared GeSn photonics.