Switching facilitated by the simultaneous formation of oxygen vacancies and conductive filaments in resistive memory devices based on thermally annealed TiO2/a-IGZO bilayers - Concepedia

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Switching facilitated by the simultaneous formation of oxygen vacancies and conductive filaments in resistive memory devices based on thermally annealed TiO2/a-IGZO bilayers

33

Citations

43

References

2022

Year

Gergely Tarsoly, Jae‐Yun Lee, Fei Shan, Sung‐Jin Kim

Applied Surface Science

Materials ScienceElectrical EngineeringOxygen VacanciesEngineeringSurface ScienceApplied PhysicsSimultaneous FormationMemory DeviceSemiconductor MemoryMicroelectronicsPhase Change MemoryConductive Filaments

References

	Year	Citations

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