ACS Applied Materials & Interfaces · 2022 · 42 citations · 22 references
In this work, we use a chemical method to design novel 2D-material/0D-quantum dot (MoS<sub>2</sub>/SnS) heterostructures. Furthermore, the unique 2D/0D heterostructure enhanced the NO<sub>2</sub> gas-sensing capability 3 times and increased the sensing recoverability by more than 90%. Advanced characterization tools such as SEM, TEM, XRD, and AFM confirm the formation of MoS<sub>2</sub>/SnS heterojunction nanomaterials. Using AFM data, the average thickness of the MoS<sub>2</sub> layer was found to be 5 nm. The highest sensor response of 0.33 with good repeatability was observed at 250 ppb of NO<sub>2</sub>. Sensing characterization reveals the ultra-fast response time, that is, 74 s, at 50 ppb of NO<sub>2</sub>. The limit of detection for detecting NO<sub>2</sub> was also found to be very low, that is, 0.54 ppb, by using MoS<sub>2</sub>/SnS heterostructures. The theoretical calculations based on density functional theory well corroborated and quantified the intermolecular interaction and gas adsorption on the surface of MoS<sub>2</sub>/SnS.
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Hai Li, Zongyou Yin, Qiyuan He et al. · Small · 2011 · 1.5K citations · Full text
Sensing Behavior of Atomically Thin-Layered MoS<sub>2</sub> Transistors
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