<i>In Situ</i>Chalcogen Leaching Manipulates Reactant Interface toward Efficient Amine Electrooxidation

Abstract

Engineering the reaction interface is necessary for advancing various electrocatalytic processes. However, most designed catalysts tend to be ineffective due to the inevitable structural reconstruction. Here we utilize that operando electrocatalysis variations (i.e., chalcogen leaching) manipulate the reactant interface toward amine electrooxidation. Taking chalcogen-doped Ni(OH)2 as an example, operando techniques uncover that chalcogens leach from the matrix and then adsorb on the surface of NiOOH as chalcogenates during the electrooxidation process. The charged chalcogenates will induce the local electric field that pushes the polar amines through the inner Helmholtz plane to enrich on the catalyst surface. Meanwhile, the polarization effect of chalcogenates and amines boost amino C–N bond activation for dehydrogenation into nitrile C≡N bonds. Under the promotion effect of surface-adsorbed chalcogenate ions, our catalysts display over 99.5% propionitrile selectivity at the low potential of 1.317 V with an ultrahigh current density. This finding highlights the use of operando changes of catalysts to rationally design efficient catalysts and further clarifies the underlying role of chalcogen atoms in the electrooxidation process.