Quasi-CW Lasing from Directly Patterned and Encapsulated Perovskite Cavity at 260 K

Abstract

Metal halide perovskites have emerged as promising gain materials for on-chip lasers in photonic integrated circuits. For these to become commercially relevant as economical on-chip light sources, a clear onset of quasi-continuous wave (quasi-CW) and, eventually, continuous wave (CW) lasing at room temperature or Peltier-cooling accessible temperatures from directly patterned perovskite cavities is a critical milestone that must be achieved. Herein, through directly patterning with nanoimprint lithography and encapsulation of the cavity with a thin layer of polycarbonate (PC), quasi-CW lasing from CH3NH3PbBr3 (MAPbBr3) is demonstrated up to 260 K. The PC layer is also shown to effectively encapsulate the surface defects of MAPbBr3 and protect devices from environmental hazards. Through the combined analysis of the crystal quality, degradation process during optical pumping, defect encapsulation, and laser performance, room temperature CW lasing from directly patterned perovskite cavities should be within reach.