Gate-Tuned Gas Molecule Sensitivity of a Two-Dimensional Semiconductor

Abstract

In this work, we develop a gate-tunable gas sensor based on a MoS₂/hBN heterostructure field effect transistor. Through experimental measurements and numerical simulations, we systematically reveal a principle that relates the concentration of the target gas and sensing signals (Δ<i>I</i>/<i>I</i>₀) as a function of gate bias. Because a linear relationship between Δ<i>I</i>/<i>I</i>₀ and the gas concentration guarantees reliable sensor operation, the optimal gate bias condition for linearity was investigated. Taking NO₂ and NH₃ as target molecules, it is clarified that the bias condition greatly depends on the electron accepting/donating nature of the gas. The effects of the bandgap and polarity of the transition metal dichalcogenides (TMDC) channel are also discussed. In order to achieve linearly increasing signals that are stable with respect to the gas concentration, a sufficiently large <i>V</i>_BG within <i>V</i>_BG > 0 is required. We expect this work will shed light on a way to precisely design reliable semiconducting gas sensors based on the characteristics of TMDC and target gas molecules.