Sn content gradient GeSn with strain controlled for high performance GeSn mid-infrared photodetectors

Abstract

GeSn detectors have attracted a lot of attention for mid-infrared Si photonics, due to their compatibility with Si complementary metal oxide semiconductor technology. The GeSn bandgap can be affected by Sn composition and strain, which determines the working wavelength range of detectors. Applying the Sn content gradient GeSn layer structure, the strain of GeSn can be controlled from fully strained to completely relaxed. In this work, the strain evolution of GeSn alloys was investigated, and the effectiveness of gradually increasing Sn composition for the growth of high-Sn-content GeSn alloys was revealed. Relaxed GeSn thick films with Sn composition up to 16.3% were grown, and GeSn photodetectors were fabricated. At 77 K, the photodetectors showed a cutoff wavelength up to 4.2 μm and a peak responsivity of 0.35 A/W under 1 V at 2.53 μm. These results indicate that GeSn alloys grown on a Sn content gradient GeSn structure have promising application in mid-infrared detection.