2004 · 38 citations · 1 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsPower ElectronicsSemiconductor DevicesComplementary Metal-oxide-semiconductor TechnologyConverter TopologiesSemiconductor Thin FilmsSwitching TechniquesWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesHigh-efficiency ConverterIsolation TopologiesMatrix ConvertersPerformance Trade-off Analysis
An isolation type vertical 600V-50A IGBT with reverse blocking capability (RB-IGBT) has been developed for the first time. Ultra-thin wafer technology combined with deep boron diffusion technique results in a great improvement on trade-off performance. RB-IGBT can be used as a bi-directional switch by anti-parallel connection with another RB-IGBT. These bi-directional switches realize a high efficiency matrix converter.
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600 V-IGBT with reverse blocking capability
Masahiro Takei, Yoshihisa Harada, K. Ueno · 2002 · 70 citations