Growth and Physical Properties of LPCVD Polycrystalline SiO x Films

Abstract

Undoped and in situ phosphorus‐doped LPCVD films of . for ranging from 0 to 0.92 (with emphasis on smaller than 0.1) have been deposited at temperatures between 580° and 850°C. The films were characterized as‐grown and after thermal annealing at 900°, 950°, or 1000°C. We used x‐ray diffraction, Raman and elastic light scattering, optical absorption and reflection, and other techniques to obtain information on the structural, optical, and electrical properties. We had demonstrated previously the advantages in terms of surface roughness and structural perfection from deposition of polysilicon in the amorphous phase and subsequent crystallization. The present work shows the same principle to be true for certain properties (surface roughness) for . Furthermore, the addition of oxygen to polysilicon introduces a great variability of other parameters (grain size, electrical conductivity), which may be useful for certain applications.