Journal of Physics Condensed Matter · 1992 · 20 citations · 7 references
Natural SciencesChemistryMaterials ScienceCondensed Matter PhysicsElectronic MaterialsSolid-state ChemistryCrystal ChemistryDielectric MaterialsDielectric PropertiesDielectricsFerroelectric MaterialsPhase TransitionsDielectric DispersionDielectric PermittivityDispersionsFerroelectric Phase TransitionsFerroelectric Single CrystalsPermittivity DispersionPhase Transition TemperatureTemperature Dependence Of Permittivity
For pt.I see ibid., vol.4, p.2687 (1992). The dielectric dispersion of the permittivity epsilon c* in (CH3NH3)5Bi2Cl11 single crystals has been studied in the frequency range from 1 MHz to 20 GHz in the temperature range 150-400 K and from 18 to 40 GHz in the temperature range 300-360 K. Near the high-temperature ferroelectric phase transition (308 K) the dielectric behaviour is determined by the properties of two relaxators; a low-frequency relaxator in the megahertz region showing a critical slowing down and a high-frequency relaxator in the gigahertz region which is thermally activated. The contribution of the high-frequency relaxator vanishes near the temperature of the second phase transition at about 170 K where another contribution of a third relaxator with an extremely small strength appears. The origins of the observed dielectric contributions with respect to the molecular motion of the CH3NH3+ cations is discussed.
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J. Lefebvre, Philippe Carpentier, R. Jakubas · Acta Crystallographica Section B Structural Science · 1991 · 77 citations
Ferroelectricity in (CH3NH3)5Bi2Br11 crystals
R. Jakubas · Solid State Communications · 1989 · 30 citations