Effect of Ultrasonic Vibrations on the Growth of In_xGa_1-xSb Mixed Crystals (III)

Abstract

The temperature change in GaSb melt caused by introducing ultrasonic vibrations of 10 kHz was measured to investigate why In x Ga 1- x Sb single crystals were grown under vibrations. The vibrations reduced the temperature difference near the melt surface across the radial direction, but they did not influence the temperature difference along the melt depth. The stirring of the melt by vibrations brought about the decrease of constitutional supercooling, and as a result the growth of In x Ga 1- x Sb single crystals was promoted.