C-Ku band GaN MMIC T/R front-end module using multilayer ceramics technology

Abstract

Summary form only given, as follows. A C-Ku band GaN MMIC T/R frontend module with a novel RF interface structure has been successfully developed by using multilayer ceramics technology. This interface improves the insertion loss operating up to 40 GHz. The module contains a 10 W GaN power amplifier over 6–18 GHz and a GaN low-noise amplifier with a gain of 15.9 dB over 3.2–20.4 GHz and noise figure of 2.3–3.7 dB over 4–18 GHz. A fabricated T/R module occupying only 12×30 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> delivers an output power of 10 W up to the Ku-band.