Second-Order Piezoresistance Coefficients of n-Type Silicon

Abstract

The nonlinear piezoresistance effect of n -type silicon was measured under <100 > and <110 > stresses at room temperature, from which the first- and second-order coefficients in stress were determined. Second-order piezoresistance expressions were deduced from a model based on the stress-dependent carrier transfer between the valleys. The experimental results are in fairly good agreement with the theoretical ones.