Japanese Journal of Applied Physics · 2012 · 66 citations · 17 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsEnergy MaterialsThin FilmsMetal SulfidesPhotovoltaic MaterialsSolar Cell MaterialsSolar CellsThin Film Electrical PropertiesThin-film MaterialsAbsorber MaterialsBand GapElectron Beam EvaporationEnergy Conversion EfficiencyFill FactorOpen-circuit VoltageSolar Cell FabricationThin-film Solar Cells
Cu2SnS3 (CTS) has been reported to have various band gap energies in the range of 0.93–1.77 eV and an absorption coefficient of 1.0×104 cm-1. It consists of elements that are inexpensive due to their abundance in Earth's crust. Consequently, CTS is expected to be utilized in the absorber layers of thin-film solar cells. In this study, Cu/Sn stacked-layer thin-film precursors were deposited on glass and glass/Mo substrates by electron beam evaporation. CTS thin films were fabricated by sulfurizing the precursors at temperatures of 450–580 °C for 2 h in an atmosphere of N2 and sulfur vapor. CTS films were estimated to have band gap energies of 0.96–1.00 eV by extrapolation. A solar cell fabricated using a CTS thin film sulfurized at 580 °C exhibited an open-circuit voltage of 211 mV, a short-circuit current of 28.0 mA/cm2, a fill factor of 0.43, and a conversion efficiency of 2.54%.
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Jonathan J. S. Scragg, Phillip J. Dale, Laurence M. Peter et al. · physica status solidi (b) · 2008 · 338 citations · Full text
Natural Sciences, Materials Engineering, Materials Science +17
Efficient CuInS2 solar cells from a rapid thermal process (RTP)
Kai Siemer, Jo Klaer, I. Luck et al. · Solar Energy Materials and Solar Cells · 2001 · 333 citations