Growth Enhancement of Radish Sprouts Induced by Low Pressure O₂Radio Frequency Discharge Plasma Irradiation

Abstract

We studied growth enhancement of radish sprouts (Raphanus sativus L.) induced by low pressure O2 radio frequency (RF) discharge plasma irradiation. The average length of radish sprouts cultivated for 7 days after O2 plasma irradiation is 30–60% greater than that without irradiation. O2 plasma irradiation does not affect seed germination. The experimental results reveal that oxygen related radicals strongly enhance growth, whereas ions and photons do not.