GaAs molecular beam epitaxy monolithic power amplifiers at U-band

Abstract

The design, fabrication, and measurements for a 44-GHz band molecular-beam epitaxy (MBE) monolithic power amplifiers are presented. The devices are based on an optimized device structure of large gate-width periphery (0.8 mm). The circuit design approach allows direct cascading of MIMIC (millimeter-wave monolithic integrated circuit) chips to provide useful power gain for system implementation. A five-stage balanced amplifier is highlighted that provided a linear gain of 15.1 dB and maximum output power of 500 mW at 42.5 GHz.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>