Photothermally Crumpled MoS₂ Film as an Omnidirectionally Stretchable Platform

Abstract

Molybdenum disulfide (MoS₂ ) is considered a fascinating material for next-generation semiconducting applications due to its outstanding mechanical stability and direct transition characteristics comparable to silicon. However, its application to stretchable platforms still is a challenging issue in wearable logic devices and sensors with noble form-factors required for future industry. Here, an omnidirectionally stretchable MoS₂ platform with laser-induced strained structures is demonstrated. The laser patterning induces the pyrolysis of MoS₂ precursors as well as the weak adhesion between Si and SiO₂ layers. The photothermal expansion of the Si layer results in the crumpling of SiO₂ and MoS₂ layers and the field-effect transistors with the crumpled MoS₂ are found to be suitable for strain sensor applications. The electrical performance of the crumpled MoS₂ depends on the degree of stretching, showing the stable omnidirectional stretchability up to 8% with approximately four times higher saturation current than its initial state. This platform is expected to be applied to future electronic devices, sensors, and so on.