Reduced recombination through CZTS/CdS interface engineering in monograin layer solar cells

Abstract

Abstract The power conversion efficiency of Cu 2 ZnSnS 4 (CZTS) solar cells is still limited by deep defects, low minority carrier lifetime and high recombination rates at the CZTS/CdS interface. The objective of this study was to find an effective method to reduce interface recombination of CZTS monograin layer solar cells. A two-step heterojunction formation process was applied by controlling the intermixing of Cd and Cu in the CZTS/CdS interface, which resulted in improved device efficiency of up to 11.7%. Surface analysis by x-ray photoelectron spectroscopy confirmed Cd diffusion into the surface of CZTS after CdS air-annealing by forming an ultra-thin Cu 2 Zn x Cd 1− x SnS 4 layer. Moreover, external quantum efficiency measurements showed that the absorption edge shifts to longer wavelengths with the addition of Cd into the CZTS surface layer. This surface modification and replacement of a CdS:Cu buffer layer by fresh CdS greatly reduced the interface recombination and improved the junction quality, contributing to an enhancement of J SC ∼3 mA cm −2 (from 20.5 to 23.6 mA cm −2 ) and fill factor ∼14% (from 59.4% to 67.7%). The serial resistance of the CZTS monograin layer solar cells was significantly reduced from 2.4 Ω cm 2 to 0.67 Ω cm 2 . To understand the electrical behavior of the highest-efficiency CZTS monograin layer solar cell in more detail, the temperature-dependent current–voltage characteristics were analyzed.