Nanotechnology · 2022 · 30 citations · 58 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsOptical MaterialsSemiconductor MaterialsInorganic NanoparticlesPhotodetectorsPlasmonic MaterialsPlasmonic NanomaterialsPlasmonicsSemiconductor NanomaterialsLight-matter InteractionOptical AbsorptionOptoelectronic PropertiesPhotodetectionPhotodetector ResponsivityPlasmonic EnhancementPlasmonic NanoparticlesPlasmonic Photodetection
Abstract 2D MoS 2 holds immense potential for electronic and optoelectronic applications due to its unique characteristics. However, the atomic-scale thickness of MoS 2 hinders the optical absorbance, thereby limiting its photodetection capability. Vertically-aligned MoS 2 (VA-MoS 2 ) has an advantage of strong optical absorption and quick intra-layer transport, offering high speed operation. The coupling of plasmonic metal nanostructure with MoS 2 can further enhance the light–matter interaction. Pt/Pd (as opposed to Ag/Au) are more promising to design next-generation nano-plasmonic devices due to their intense interband activity over a broad spectral range. Herein, we report Pt nanoparticle (NPs) enhanced broadband photoresponse in VA-MoS 2 . The optical absorbance of MoS 2 is enhanced after the integration of Pt NPs, with a four-fold enhancement in photocurrent. The formation of Schottky junction at Pt-MoS 2 interface inhibits electron transmission, suppressing the dark current and substantially reducing NEP. The plasmonic-enabled photodetector shows enhanced responsivity (432 A W −1 , 800 nm) and detectivity (1.85 × 10 14 Jones, 5 V) with a low response time (87 ms/84 ms), attributed to faster carrier transport. Additionally, a theoretical approach is adopted to calculate wavelength-dependent responsivity, which matches well with experimental results. These findings offer a facile approach to modulate the performance of next-generation optoelectronic devices for practical applications.
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