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An insight into structural, electronic and optical characteristics of Mo1-xMxO3 (M = Zr, Y, ZrY) for the formation of conducting filaments in optoelectronic memory devices: A first principles study

Materials ScienceIi-vi SemiconductorOptical MaterialsEngineeringPhysicsOxide ElectronicsFirst PrinciplesOptical CharacteristicsApplied PhysicsSemiconductor MaterialOptoelectronic DevicesOptoelectronic Memory DevicesOptoelectronicsCompound Semiconductor