Solution-processable Li-doped transition metal oxide hole-injection layer for highly efficient quantum-dot light-emitting diodes

Abstract

Vanadium oxide (V 2 O 5 ) doped with Li (5, 10, and 15 mol%) was synthesized using an easy and low-cost solution process method and was used as a hole-injection layer (HIL) for quantum-dot light-emitting diodes (QLEDs).