Analysis of I–V-T characteristics of Be-doped AlGaAs Schottky diodes grown on (100) GaAs substrates by molecular beam epitaxy - Concepedia

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Analysis of I–V-T characteristics of Be-doped AlGaAs Schottky diodes grown on (100) GaAs substrates by molecular beam epitaxy

DOI Full Paper Access

14

Citations

36

References

2022

Year

Slimane Oussalah, Walid Filali, Elyes Garoudja, Boumediene Zatout, Fouaz Lekoui, Rachid Amrani, Nouredine Sengouga, M. Henini

Microelectronics Journal

References

	Year	Citations

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